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BUK714R1-40BT n-channel trenchplus standard level fet rev. 02 ? 10 february 2009 product data sheet 1. product profile 1.1 general description standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using nxp high-performance automotive (hpa) trenchmos technology. the devices include trenchplus diodes for te mperature sensing. this product has been designed and qualified to the appropriate aec standard for use in automotive critical applications. 1.2 features and benefits ? allows responsive temperature monitoring due to integrated temperature sensor ? low conduction losses due to low on-state resistance ? q101 compliant ? suitable for thermally demanding environments due to 175 c rating 1.3 applications ? 12 v loads ? electrical power assisted steering (epas) ? general purpose power switching ? motors, lamps and solenoids 1.4 quick reference data [1] continuous current is limited by package. table 1. quick reference symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 175 c - - 40 v i d drain current v gs =10v; t mb =25c; see figure 2 ; see figure 3 [1] --75a v gs =10v; t mb =100c; see figure 2 [1] --75a p tot total power dissipation t mb = 25 c; see figure 1 - - 272 w static characteristics r dson drain-source on-state resistance v gs =10v; i d =50a; t j = 25 c; see figure 7 ; see figure 8 -3.44.1m ?
BUK714R1-40BT_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 10 february 2009 2 of 13 nxp semiconductors BUK714R1-40BT n-channel trenchplus standard level fet 2. pinning information 3. ordering information table 2. pinning information pin symbol description simplified outline graphic symbol 1g gate s o t 4 2 6 (d2pak) 2 a anode 3d drain 4 k cathode 5s source mb d mounting base; connected to drain mb 1 3 245 da sk g 03nm72 table 3. ordering information type number package name description version BUK714R1-40BT d2pak plastic single-ended surface-mounted package (d2pak); 5 leads (one lead cropped) sot426
BUK714R1-40BT_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 10 february 2009 3 of 13 nxp semiconductors BUK714R1-40BT n-channel trenchplus standard level fet 4. limiting values [1] current is limited by power dissipation chip rating. [2] continuous current is limited by package. table 4. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j 25 c; t j 175 c - 40 v v dgr drain-gate voltage r gs =20k ? -40v v gs gate-source voltage -20 20 v i d drain current t mb =25c; v gs =10v; see figure 2 ; see figure 3 [1] -187a [2] -75a t mb =100c; v gs = 10 v; see figure 2 [2] -75a i dm peak drain current t mb =25c; t p 10 s; pulsed; see figure 3 -748a p tot total power dissipation t mb =25c; see figure 1 -272w t stg storage temperature -55 175 c t j junction temperature -55 175 c source-drain diode i s source current t mb =25c; [1] -187a [2] -75a i sm peak source current t p 10 s; pulsed; t mb =25c - 748 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy i d =75a; v sup 40 v; r gs =50 ? ; v gs =10v; t j(init) = 25 c; unclamped -1.5j electrostatic discharge v esd electrostatic discharge voltage hbm; c = 100 pf; r = 1.5 k ? -4kv
BUK714R1-40BT_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 10 february 2009 4 of 13 nxp semiconductors BUK714R1-40BT n-channel trenchplus standard level fet fig 1. normalized total power dissipation as a function of mounting base temperature fig 2. continuous drain current as a function of mounting base temperature fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage t mb ( c) 0 200 150 50 100 03na19 40 80 120 p der (%) 0 03nm69 0 50 100 150 200 0 50 100 150 200 i d (a) capped at 75 a due to package t mb ( c) 03nm68 1 10 10 2 10 3 10 -1 1 10 10 2 v ds (v) i d (a) d.c. 100 ms 10 ms limit r dson = v ds / i d 1 ms t p = 10 s 100 s capped at 75 a due to package
BUK714R1-40BT_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 10 february 2009 5 of 13 nxp semiconductors BUK714R1-40BT n-channel trenchplus standard level fet 5. thermal characteristics table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient minimum footprint; mounted on a printed-circuit board --50k/w r th(j-mb) thermal resistance from junction to mounting base see figure 4 - - 0.55 k/w fig 4. transient thermal impedance from junction to mounting base as a function of pulse duration 03ni64 10 -3 10 -2 10 -1 1 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 t p (s) z th(j-mb) (k/w) t p t p t p t t = = 0.5 0.1 0.05 0.02 single shot 0.2
BUK714R1-40BT_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 10 february 2009 6 of 13 nxp semiconductors BUK714R1-40BT n-channel trenchplus standard level fet 6. characteristics table 6. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =0.25ma; v gs =0v; t j =25c 40 - - v i d =0.25ma; v gs =0v; t j =-55c 36 - - v v gs(th) gate-source threshold voltage i d =1ma; v ds = v gs ; t j =25c; see figure 9 234v i d =1ma; v ds = v gs ; t j = 175 c; see figure 9 1- - v i d =1ma; v ds = v gs ; t j =-55c; see figure 9 --4.4v i dss drain leakage current v ds =40v; v gs =0v; t j = 25 c - 0.02 1 a v ds =40v; v gs =0v; t j = 175 c - - 500 a i gss gate leakage current v ds =0v; v gs =20v; t j = 25 c - 2 100 na v ds =0v; v gs =-20v; t j = 25 c - 2 100 na r dson drain-source on-state resistance v gs =10v; i d =50a; t j =25c; see figure 7 ; see figure 8 -3.44.1m ? v gs =10v; i d =50a; t j = 175 c; see figure 7 ; see figure 8 --7.8m ? v f(tsd) temperature sense diode forward voltage i f =1ma; t j = 25 c 1.58 1.6 1.63 v s f(tsd) temperature sense diode temperature coefficient i f =1ma; t j >55c; t j < 175 c -2.55 -2.83 -3.11 mv/k dynamic characteristics q g(tot) total gate charge i d =25a; v ds =32v; v gs =10v; t j =25c; see figure 14 -83-nc q gs gate-source charge - 18 - nc q gd gate-drain charge - 29 - nc c iss input capacitance v gs =0v; v ds =25v; f=1mhz; t j =25c; see figure 12 - 5106 6808 pf c oss output capacitance - 1389 1667 pf c rss reverse transfer capacitance - 527 721 pf t d(on) turn-on delay time v ds =30v; r l =1.2 ? ; v gs =10v; r g(ext) =10 ? ; t j =25c -38-ns t r rise time - 82 - ns t d(off) turn-off delay time - 141 - ns t f fall time - 90 - ns l d internal drain inductance from drain lead 6 mm from package to centre of die; t j =25c -4.5-nh from upper edge of drain mounting base to centre of die; t j =25c -2.5-nh l s internal source inductance from source lead to source bond pad; lead length 6 mm; t j =25c -7.5-nh
BUK714R1-40BT_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 10 february 2009 7 of 13 nxp semiconductors BUK714R1-40BT n-channel trenchplus standard level fet source-drain diode v sd source-drain voltage i s =25a; v gs =0v; t j =25c; see figure 16 - 0.85 1.2 v t rr reverse recovery time i s =20a; di s /dt = -100 a/s; v gs =-10v; v ds =30v; t j =25c -70-ns q r recovered charge - 55 - nc table 6. characteristics ?continued symbol parameter conditions min typ max unit fig 5. output characteristics: drain current as a function of drain-source voltage; typical values fig 6. drain-source on-state resistance as a function of gate-source voltage; typical values fig 7. drain-source on-state resistance as a function of drain current; typical values fig 8. normalized drain-source on-state resistance factor as a function of junction temperature 03nq15 0 100 200 300 0246810 v ds (v) i d (a) 6 5.5 5 4.5 6.5 7 10 20 label is vgs (v) 03nq17 0 4 8 12 4 8 12 16 20 v gs (v) r dson (m ) 03nq16 0 5 10 15 20 0 100 200 300 i d (a) r dson (mw) 6 6.5 7 8 10 20 lable is v gs (v) 03aa27 0 0.5 1 1.5 2 -60 0 60 120 180 t j ( c) a
BUK714R1-40BT_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 10 february 2009 8 of 13 nxp semiconductors BUK714R1-40BT n-channel trenchplus standard level fet fig 9. gate-source threshold voltage as a function of junction temperature fig 10. sub-threshold drain current as a function of gate-source voltage fig 11. forward transconductance as a function of drain current; typical values fig 12. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values t j ( c) ? 60 180 120 060 03aa32 2 3 1 4 5 v gs(th) (v) 0 max typ min 03aa35 v gs (v) 06 4 2 10 ? 4 10 ? 5 10 ? 2 10 ? 3 10 ? 1 i d (a) 10 ? 6 min typ max 03nq18 0 40 80 120 0 25 50 75 100 i d (a) g fs (s) 03nh35 0 2000 4000 6000 8000 10 -1 1 10 10 2 v ds (v) c (pf) c iss c oss c rss
BUK714R1-40BT_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 10 february 2009 9 of 13 nxp semiconductors BUK714R1-40BT n-channel trenchplus standard level fet fig 13. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 14. gate-source voltage as a function of turn-on gate charge; typical values fig 15. forward voltage of temperature sense diode as a function of junction temperature; typical values fig 16. reverse diode current as a function of reverse diode voltage; typical values 03nq19 0 25 50 75 100 0246 v gs (v) i d (a) t j = 175 c t j = 25 c 03nq21 0 2 4 6 8 10 0 25 50 75 100 q g (nc) v gs (v) v dd = 14 v v dd = 32 v 03nq79 1.0 1.2 1.4 1.6 1.8 0 50 100 150 200 t j ( c) v f (v) 03nq20 0 25 50 75 100 0.0 0.3 0.6 0.9 1.2 v sd (v) i s (a) t j = 175 c t j = 25 c
BUK714R1-40BT_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 10 february 2009 10 of 13 nxp semiconductors BUK714R1-40BT n-channel trenchplus standard level fet 7. package outline fig 17. package outline sot426 (d2pak) references outline version european projection issue date iec jedec jeita sot426 0 2.5 5 mm scale plastic single-ended surface-mounted package (d2pak); 5 leads (one lead cropped) sot426 e e e e e b a 1 a a 1 l p bc d max. e a unit dimensions (mm are the original dimensions) e 11 mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 2.90 2.10 h d 15.80 14.80 q 2.60 2.20 10.30 9.70 d 1 1.60 1.20 1.70 05-03-09 06-03-16 1 3 24 5 mounting base d 1 h d d q l p c
BUK714R1-40BT_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 10 february 2009 11 of 13 nxp semiconductors BUK714R1-40BT n-channel trenchplus standard level fet 8. revision history table 7. revision history document id release date data sheet status change notice supersedes BUK714R1-40BT_2 20090210 product data sheet - buk71_794r1_40bt-01 modifications: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? type number BUK714R1-40BT separated from data sheet buk71_794r1_40bt-01. buk71_794r1_40bt-01 (9397 750 13954) 20041104 product data sheet - -
BUK714R1-40BT_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 10 february 2009 12 of 13 nxp semiconductors BUK714R1-40BT n-channel trenchplus standard level fet 9. legal information 9.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at url http://www.nxp.com . 9.2 definitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 disclaimers general ? information in this document is believed to be accurate and reliable. however, nxp semiconductors d oes not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in su ch equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale ? nxp semiconductors products are sold subject to the general terms and condit ions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writ ing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. 9.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. trenchmos ? is a trademark of nxp b.v. 10. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the object ive specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this doc ument contains the pr oduct specification.
nxp semiconductors BUK714R1-40BT n-channel trenchplus standard level fet ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: rev. 02 ? 10 february 2009 document identifier: BUK714R1-40BT_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 11. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 5 thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 9 legal information. . . . . . . . . . . . . . . . . . . . . . . .12 9.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 9.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 9.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 9.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 10 contact information. . . . . . . . . . . . . . . . . . . . . .12

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